In this paper we derive the I–V characteristics of Schottky contacts based on bulk metal to
semiconductor quantum wires interfaces. The obtained results show that quantum
confinement is a strong reduction of the reverse saturation current when compared to
conventional Schottky contacts. Numerical simulations are carried out to highlight the
advantages of using these proposed heterodimensional interfaces in applications involving
low-noise photodetectors and low-leakage gate electrodes.