RF MEMS ohmic switches are prone to stiction and contact degradation. In literature, bumps are made at the contact area to reduce stiction with additional fabrication steps. In this article, ohmic switch based on cantilever configuration is developed without using any additional step. The switch structure is modified to improve its mechanical parameters, such as pull-in voltage and switching speed. The measured switching time of the switch is 1.8 μs. A footprint of the developed single pole single throw (SPST) switch is 0.9 mm ² . The insertion loss and isolation of the SPST switch are better than 0.8 and 20 dB, respectively. The switch has a wide bandwidth of 10 GHz (dc to 10 GHz). The switch has completed 725 million hot cycles at 1-dBm power.