In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
E O'Connor, RD Long, K Cherkaoui… - Applied Physics …, 2008 - pubs.aip.org
We have studied an in situ passivation of In 0.53 Ga 0.47 As, based on H 2 S exposure (50–
350 C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition
of Hf O 2 using Hf [N (CH 3) 2] 4 and H 2 O precursors. X-ray photoelectron spectroscopy
revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H 2 S
exposure temperatures. Transmission electron microscopy analysis demonstrates a
reduction of the interface oxide between the In 0.53 Ga 0.47 As epitaxial layer and the …
350 C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition
of Hf O 2 using Hf [N (CH 3) 2] 4 and H 2 O precursors. X-ray photoelectron spectroscopy
revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H 2 S
exposure temperatures. Transmission electron microscopy analysis demonstrates a
reduction of the interface oxide between the In 0.53 Ga 0.47 As epitaxial layer and the …
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