The majority of electrical failures in wind turbines occur in the semiconductor devices of
either the grid or generator converters. This is due to temperature swings affecting the layers
of IGBTs in different ways; these effects are aggravated by the variation of wind speed. In
order to increase reliability and decrease the maintenance costs of wind turbines, several
condition monitoring methods for semiconductor devices have been proposed in the
technical literature. The implementation of accurate on-line condition monitoring mainly …

The majority of electrical failures in wind turbines occur in the generator‐side semiconductor
devices. This is due to temperature swings affecting the layers of insulated‐gate bipolar
transistors in different ways; these effects are aggravated by the variation of wind speed. The
implementation of accurate on‐line condition monitoring mainly relies on on‐line tracking of
the temperature variation of components. The maximum temperature stress is observed at
the junction terminal of the devices, which cannot be easily measured. Additionally, it is …