Atom probe tomography (APT) has been used to characterize the distribution of In atoms
within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate
produced using epitaxial lateral overgrowth. Application of the focused ion beam
microscope enabled APT needles to be prepared from the low defect density regions of the
grown sample. A complementary analysis was also undertaken on QWs having comparable
In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution …