Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2− x thin films
P Bousoulas, I Michelakaki, D Tsoukalas - Thin Solid Films, 2014 - Elsevier
The memory performance of titanium oxide (TiO 2− x)-based resistive memories containing
an ultra thin reactive Ti top electrode can be greatly enhanced. Very good switching memory
characteristics were demonstrated for an Au/Ti/TiO 2− x/Au/SiO 2/Si structure with the
insertion of a Ti nanolayer at the Au/TiO 2− x interface. Due to the superb ability of Ti to
absorb oxygen atoms from the dielectric matrix, a large amount of oxygen vacancies is
created, which are crucial for the stable function of the memory devices. As the Ti thickness …
an ultra thin reactive Ti top electrode can be greatly enhanced. Very good switching memory
characteristics were demonstrated for an Au/Ti/TiO 2− x/Au/SiO 2/Si structure with the
insertion of a Ti nanolayer at the Au/TiO 2− x interface. Due to the superb ability of Ti to
absorb oxygen atoms from the dielectric matrix, a large amount of oxygen vacancies is
created, which are crucial for the stable function of the memory devices. As the Ti thickness …
以上显示的是最相近的搜索结果。 查看全部搜索结果