Influence of silicon binding energy on photoluminescence of Si-implanted silicon dioxide

AA González-Fernández, J Juvert… - ECS …, 2012 - iopscience.iop.org
Studies of photo-luminescence (PL) and X-ray Photoelectron Spectroscopy (XPS) were
performed to silicon-rich silicon dioxide films (SRO) fabricated by implantation of Si ions on
SiO2 deposited by plasma enhanced chemical vapor deposition (PECVD). Samples
presented PL spectra formed by the contribution of two bands, respectively related to defects
and quantum confinement (QC). The XPS results for the different samples presented
significant differences in the density and types of Si-Si and Si-O bonds. A relation was …

Influence of Silicon Binding Energy on Photoluminescence of Si-implanted Silicon Dioxide

MA MIJARES - 2012 - inaoe.repositorioinstitucional.mx
Studies of photo-luminescence (PL) and X-ray Photoelectron Spectroscopy (XPS) were
performed to silicon-rich silicon dioxide films (SRO) fabricated by implantation of Si ions on
SiO₂ deposited by plasma enhanced chemical vapor deposition (PECVD). Samples
presented PL spectra formed by the contribution of two bands, respectively related to defects
and quantum confinement (QC). The XPS results for the different samples presented
significant differences in the density and types of Si-Si and Si-O bonds. A relation was …
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