Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
JP Gupta, N Bhargava, S Kim, T Adam… - Applied physics …, 2013 - pubs.aip.org
Infrared electroluminescence was observed from GeSn/Ge pn heterojunction diodes with
8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped,
compressively strained, and pseudomorphic on Ge substrates. Spectral measurements
indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with
applied pulsed current, and with reducing device temperatures. The total integrated emitted
power from a single edge facet was 54 μW at an applied peak current of 100 mA at 100 K …
8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped,
compressively strained, and pseudomorphic on Ge substrates. Spectral measurements
indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with
applied pulsed current, and with reducing device temperatures. The total integrated emitted
power from a single edge facet was 54 μW at an applied peak current of 100 mA at 100 K …
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