GaN HEMT 器件结构的研究进展
于宁, 王红航, 刘飞飞, 杜志娟, 王岳华… - Chinese Journal of …, 2015 - opticsjournal.net
… And then, the latest research progress on the high-frequency, high-power area of gallium
nitride high electron mobility transistor is reviewed in detail with focus on the material structural …
nitride high electron mobility transistor is reviewed in detail with focus on the material structural …