Ion beam mixing of noble metals-Ge bilayer thin films
NS Saleh, KA Al-Saleh, AA Saleh - … Methods in Physics Research Section B …, 1990 - Elsevier
Ar+ and Kr+ ion beams from the Jordan Van de Graaff Accelerator were utilized to irradiate
thin films of Au-Ge, Ag-Ge and Cu-Ge systems at room temperature. Electrical resistivity
measurements and backscattering spectrometry were employed as probes to investigate the
kinetics of ion mixing, ie the formation of solid solutions in these systems. Despite the fact
that the available model of Riviere and Jaouen on the kinetics of ion mixing was originally
applied to multilayer systems, its application to bilayer systems under this investigation …
thin films of Au-Ge, Ag-Ge and Cu-Ge systems at room temperature. Electrical resistivity
measurements and backscattering spectrometry were employed as probes to investigate the
kinetics of ion mixing, ie the formation of solid solutions in these systems. Despite the fact
that the available model of Riviere and Jaouen on the kinetics of ion mixing was originally
applied to multilayer systems, its application to bilayer systems under this investigation …
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