Ion-beam-produced damage and its stability in AlN films

SO Kucheyev, JS Williams, J Zou, C Jagadish… - Journal of applied …, 2002 - pubs.aip.org
Structural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire
substrates) bombarded with 300 keV Au+ 197 ions at room and liquid-nitrogen temperatures
(RT and LN 2) are studied by a combination of Rutherford backscattering/channeling
spectrometry and cross-sectional transmission electron microscopy. Results reveal
extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice
amorphization is not observed even for very large doses of keV heavy ions at LN 2. An …
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