Linear and nonlinear intersubband optical properties of direct band gap GeSn quantum dots

M Baira, B Salem, NA Madhar, B Ilahi - Nanomaterials, 2019 - mdpi.com
Intersubband optical transitions, refractive index changes, and absorption coefficients are …
for direct bandgap strained GeSn/Ge quantum dots. The linear, third-order nonlinear and total, …

[引用][C] Linear and nonlinear intersubband optical properties of direct band gap GeSn quantum dots. Nanomaterials 9, 124 (2019)

M Baira, B Salem, NA Madhar, B Ilahi

Intersubband optical nonlinearity of GeSn quantum dots under vertical electric field

M Baira, B Salem, N Ahamad Madhar, B Ilahi - Micromachines, 2019 - mdpi.com
… 3rd order nonlinear component with increasing both quantum dot (… that intersubband optical
properties of GeSn quantum dots … Recent achievement in direct band gap GeSn material has …

Electric field effect on the intersubband optical absorption of GeSn quantum wells with parabolically graded barriers

N Yahyaoui, P Baser, M Said, S Saadaoui - Micro and Nanostructures, 2023 - Elsevier
… on the linear and nonlinear optical properties of quantum dots … However, due to the low
band gap of 0.14 eV, the band gap … In this study, a direct bandgap laser obtained from group IV …

[HTML][HTML] Electronic and spectral properties of Ge1− xSnx quantum dots

K Gawarecki, J Ziembicki, P Scharoch… - Journal of Applied …, 2024 - pubs.aip.org
… In the case of GeSn, we take the same on-site parameters as … The comparison between our
band structure parameters and … We also study the optical properties of colloidal quantum dots

Optical Behavior of Group-IV Semiconductors in Relation to Atomic Interfacial Disorder, Quantum Confinement, and Fano Resonance

A Attiaoui - 2023 - search.proquest.com
… The band structure and the dielectric function dictate the optical … Spin in semiconductor
quantum dots has emerged as a … -level properties on the electronic and optical characteristics. …

Computation of the near-infrared electro-absorption in GeSn/SiGeSn Step Quantum Wells

N Yahyaoui, E Jellouli, P Baser, N Zeiri, M Said… - Micro and …, 2024 - Elsevier
… near-infrared photodetectors, and intersubband (ISBT)-based … ranges to the direct and indirect
energy gap structure were … show that electronic and optical properties are strongly affected …

Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells

S Ojo, H Stanchu, S Acharya, A Said, S Amoah… - Journal of Crystal …, 2023 - Elsevier
… interface quality and its effect on optical properties. Intermixing at GeSn/SiGeSn interfaces is
found … in a direct-bandgap GeSn QW. For the 532 nm laser excitation, the PL peak from the …

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

C Xu, CL Senaratne, J Kouvetakis, J Menéndez - Solid-State Electronics, 2015 - Elsevier
band gaps of different materials while preserving a common lattice constant [21], [22]. Moreover,
depending on the Si/Sn ratio the material has band gaps … of the optical properties of the …

[PDF][PDF] Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities

S Hafiz - 2016 - scholarscompass.vcu.edu
… Through quantum confinement and electronic band structurequantum dots (QDs) for
developing efficient silicon … These findings on the effect of Sn incorporation on optical properties