Low-frequency and random telegraph noise in 14-nm bulk si charge-trap transistors
IEEE Transactions on Electron Devices, 2023•ieeexplore.ieee.org
Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2-and
40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology.
Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for
2-fin devices. Trapped charge in programed devices does not significantly affect 1/noise
magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap
energy and spatial distributions. TID irradiation activates a large number of stable radiation …
40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology.
Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for
2-fin devices. Trapped charge in programed devices does not significantly affect 1/noise
magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap
energy and spatial distributions. TID irradiation activates a large number of stable radiation …
Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2- and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/ noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps.
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