Low-resistivity ZnO: F: Al transparent thin films
DC Altamirano-Juárez, G Torres-Delgado… - Solar energy materials …, 2004 - Elsevier
Polycrystalline ZnO thin films doped with Al and F in nominal concentrations of 0.25 at%
each element, have been obtained by the sol–gel technique. The films show a good
adherence to the substrate, transmissions higher than 90% for wavelengths above 430nm,
and low resistivities: 8.6× 10− 3Ωcm in darkness, and 5.6× 10− 3Ωcm under controlled
illumination. These values are among the lowest obtained to date for doped ZnO. The
mobility, 27cm2/Vs, is one of the highest reported for this kind of materials. When both …
each element, have been obtained by the sol–gel technique. The films show a good
adherence to the substrate, transmissions higher than 90% for wavelengths above 430nm,
and low resistivities: 8.6× 10− 3Ωcm in darkness, and 5.6× 10− 3Ωcm under controlled
illumination. These values are among the lowest obtained to date for doped ZnO. The
mobility, 27cm2/Vs, is one of the highest reported for this kind of materials. When both …
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