MOSFET mismatch modeling: a new approach
IEEE Design & Test of Computers, 2006•ieeexplore.ieee.org
Digital and analog ICs generally rely on the concept of matched behavior between
identically designed devices. Time-independent variations between identically designed
transistors, called mismatch, affect the performance of most analog and even digital MOS
circuits. This article focuses on the analysis of mismatch in MOS transistors resulting from
random fluctuations of the dopant concentration, first studied by Keyes. Today, we recognize
these fluctuations as the main cause of mismatch in bulk CMOS transistors.
identically designed devices. Time-independent variations between identically designed
transistors, called mismatch, affect the performance of most analog and even digital MOS
circuits. This article focuses on the analysis of mismatch in MOS transistors resulting from
random fluctuations of the dopant concentration, first studied by Keyes. Today, we recognize
these fluctuations as the main cause of mismatch in bulk CMOS transistors.
Digital and analog ICs generally rely on the concept of matched behavior between identically designed devices. Time-independent variations between identically designed transistors, called mismatch, affect the performance of most analog and even digital MOS circuits. This article focuses on the analysis of mismatch in MOS transistors resulting from random fluctuations of the dopant concentration, first studied by Keyes. Today, we recognize these fluctuations as the main cause of mismatch in bulk CMOS transistors.
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