Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is
electrically coupled to the magnetic tunnel junction by a first conductive structure. This
conductive structure includes a blocking layer and a seed layer, which extends between the
blocking layer and the magnetic tunnel junction. The blocking layer is formed as an
amorphous metal compound. In some of the embodiments, the blocking layer is a thermally
treated layer and an amorphous state of the blocking layer is maintained during and post …

BACKGROUND The inventive concepts relate to magnetic memory devices and, more
particularly, to magnetic memory devices having perpendicular magnetic tunnel junctions
therein. High speed and/or low Voltage semiconductor memory devices have been
demanded with the development of high speed and/or low power consumption electronic
devices including semiconductor memory devices. To satisfy these demands, a magnetic
memory device has been suggested. The magnetic memory device has high speed and/or …