Method of fabrication of highly resistive GaN bulk crystals
S Porowski, M Bockowski, I Grzegory… - US Patent …, 2001 - Google Patents
The method of fabrication of highly resistive GaN bulk crystals by crystallization from the
solution of atomic nitrogen in the molten mixture of metals, containing gallium in the
concentration not lower than 90 at.% and the Periodic Table group II metals: calcium,
beryllium or in the concentration of 0.01-10 at.%, at the temperature 1300-1700 C., under the
nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by
the temperature gradient not higher than 10 C./cm.
solution of atomic nitrogen in the molten mixture of metals, containing gallium in the
concentration not lower than 90 at.% and the Periodic Table group II metals: calcium,
beryllium or in the concentration of 0.01-10 at.%, at the temperature 1300-1700 C., under the
nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by
the temperature gradient not higher than 10 C./cm.
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