Monolithic Ge-on-Si lasers for integrated photonics
7th IEEE International Conference on Group IV Photonics, 2010•ieeexplore.ieee.org
… [13,14], electroluminescence (EL) [15], and optical gain [16] at room temperature in
tensile-strained n+ Ge-on-Si confirmed our theoretical predictions. In this paper we present
lasing from the direct gap transition of monolithic Ge-on-Si edge emitting waveguide devices.
The emission wavelength range of 15901610 nm is in good agreement with the optical gain
spectrum reported previously [16]. We will also discuss theoretical modeling and design of n+
Si/n+ Ge/p+ Si double heterojunction structures for electrically pumped … Considering that …
tensile-strained n+ Ge-on-Si confirmed our theoretical predictions. In this paper we present
lasing from the direct gap transition of monolithic Ge-on-Si edge emitting waveguide devices.
The emission wavelength range of 15901610 nm is in good agreement with the optical gain
spectrum reported previously [16]. We will also discuss theoretical modeling and design of n+
Si/n+ Ge/p+ Si double heterojunction structures for electrically pumped … Considering that …
We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility of electrically pumped lasers.
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