Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the same
H Jeong, H Park, H Shin, BJ Kim - US Patent 6,485,815, 2002 - Google Patents
(57) ABSTRACT A multi-layered dielectric layer wherein the adhesion char acteristic of an
insulating layer including a Si-CH bond is improved, and a method of forming the same are
provided. The multi-layered dielectric layer is formed on conductive patterns and includes a
first insulating layer formed of a layer having a low dielectric constant including the Si-CH
bond. In order to improve the adhesion characteristic of the first insulating layer, an adhesion
Surface is formed on the Surface of the first insulating layer by treating the first insulating …
insulating layer including a Si-CH bond is improved, and a method of forming the same are
provided. The multi-layered dielectric layer is formed on conductive patterns and includes a
first insulating layer formed of a layer having a low dielectric constant including the Si-CH
bond. In order to improve the adhesion characteristic of the first insulating layer, an adhesion
Surface is formed on the Surface of the first insulating layer by treating the first insulating …
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