Provided is a multiple-gate metal oxide Semiconductor (MOS) transistor and a method for
manufacturing the same, in which a channel is implemented in a streamline shape, an
expansion region is implemented in a gradually increased form, and Source and drain
regions is implemented in an elevated Structure by using a difference of a thermal oxida tion
rate depending on a crystal orientation of Silicon and a geographical shape of the Single-
crystal Silicon pattern. AS the channel is formed in a Streamline shape, it is possible to …

Provided is a multiple-gate metal oxide semiconductor (MOS) transistor and a method for
manufacturing the same, in which a channel is implemented in a streamline shape, an
expansion region is implemented in a gradually increased form, and source and drain
regions is implemented in an elevated structure by using a difference of a thermal oxidation
rate depending on a crystal orientation of silicon and a geographical shape of the single-
crystal silicon pattern. As the channel is formed in a streamline shape, it is possible to …