SIS (superconductor-insulator-superconductor) multilayered structure has been proposed in order to increase the maximum acceleration gradient of SRF cavities. Nb3Sn is the material most expected as a superconducting layer of the SIS multilayered structure because it offers both a large critical temperature and large predicted Hsh. Most important in fabricating Nb3Sn thin films is the stoichiometry of the material produced, and the lack of tin leads to performance degradation. We have launched a new in-house DC magnetron sputtering apparatus for Nb3Sn deposition. Nb and Sn layers were alternately and repeatedly deposited on Si wafer while adjusting the film thickness of each layer, so we successfully obtained Nb-Sn films having appropriate composition ratio. The as-deposited films were annealed under the temperature of 600 degree C for 1 hour to generate the Nb3Sn phase. The characteristics of Nb-Sn films evaluated by XRD, XRF, FE-SEM, and so on. We also measured critical temperature of the annealed films. In this paper, the detail of the Nb3Sn coating method and the measurement result of the Nb-Sn films will be reported.