New world record Cu(In, Ga)(Se, S)2 thin film solar cell efficiency beyond 22%

R Kamada, T Yagioka, S Adachi… - 2016 IEEE 43rd …, 2016 - ieeexplore.ieee.org
R Kamada, T Yagioka, S Adachi, A Handa, KF Tai, T Kato, H Sugimoto
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016ieeexplore.ieee.org
World record efficiency of 22.3% Cu (In, Ga)(Se, S) 2 (CIGS) thin film solar cell has been
achieved in Solar Frontier KK and certified independently by Fraunhofer Institute für Solare
Energiesysteme (ISE). The device parameters are as follows, J SC: 39.4 mA cm-2, V OC:
721.9 mV and FF: 0.782. Compared to our previous champion with 20.9% efficiency, a major
improvement in V OC (+ 36.1 mV) was observed due to KF post deposition treatment that
improve the absorber layer and the use of CdS buffer. As we thrive to achieve the utmost …
World record efficiency of 22.3% Cu(In, Ga)(Se, S) 2 (CIGS) thin film solar cell has been achieved in Solar Frontier K.K. and certified independently by Fraunhofer Institute für Solare Energiesysteme (ISE). The device parameters are as follows, J SC : 39.4 mA cm -2 , V OC : 721.9 mV and FF: 0.782. Compared to our previous champion with 20.9% efficiency, a major improvement in V OC (+36.1 mV) was observed due to KF post deposition treatment that improve the absorber layer and the use of CdS buffer. As we thrive to achieve the utmost ecological advantages, Cd-free buffer was also developed by replacing the ZnO/CdS buffer with optimized (Zn, Mg)O/Zn(O, S, OH) buffer layers. As a result, an in-house conversion efficiency of 22.8% was achieved. This demonstrated that Cd-free CIGS solar cell still possesses huge potential and we will continue to explore new pathways to achieve higher efficiency CIGS solar cells.
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