Nitrogen Introduction in pp‐HMDSO Thin Films Deposited by Atmospheric Pressure Dielectric Barrier Discharge: An XPS Study

R Maurau, ND Boscher, J Guillot… - Plasma Processes and …, 2012 - Wiley Online Library
Plasma Processes and Polymers, 2012Wiley Online Library
We report on the change of chemistry involved by molecular nitrogen in the deposition
process of pp‐HMDSO thin films with an AP‐DBD, using HMDSO as chemical precursor. By
modifying the composition of the main gas from pure argon to pure nitrogen, thin films
composition varied from SiOC: H to SiOCN: H. A small amount of nitrogen favours polymer
chain propagation, by consuming species responsible for chain termination and playing a
role in propagation phase. Higher nitrogen content leads to more cross‐linked coatings. The …
Abstract
We report on the change of chemistry involved by molecular nitrogen in the deposition process of pp‐HMDSO thin films with an AP‐DBD, using HMDSO as chemical precursor. By modifying the composition of the main gas from pure argon to pure nitrogen, thin films composition varied from SiOC:H to SiOCN:H. A small amount of nitrogen favours polymer chain propagation, by consuming species responsible for chain termination and playing a role in propagation phase. Higher nitrogen content leads to more cross‐linked coatings. The use of optical emission spectroscopy together with FT‐IR and XPS is shown to be relevant to study such processes.
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