Nitrogen bonding, stability, and transport in AlON films on Si
GV Soares, KP Bastos, RP Pezzi, L Miotti… - Applied physics …, 2004 - pubs.aip.org
The chemical environment of N in nitrided aluminum oxide films on Si (001) was
investigated by angle-resolved x-ray photoelectron spectroscopy. Two different bonding
configurations were identified, namely N–Al and N–O–Al, suggesting the formation of the
AlN and AlO 2 N compounds. The near-surface region is N-rich and AlN compounds therein
are more abundant than AlO 2 N, whereas in bulk regions the proportions of these two
compounds are comparable. Rapid thermal annealing at 1000° C for 10 s in vacuum or in …
investigated by angle-resolved x-ray photoelectron spectroscopy. Two different bonding
configurations were identified, namely N–Al and N–O–Al, suggesting the formation of the
AlN and AlO 2 N compounds. The near-surface region is N-rich and AlN compounds therein
are more abundant than AlO 2 N, whereas in bulk regions the proportions of these two
compounds are comparable. Rapid thermal annealing at 1000° C for 10 s in vacuum or in …
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