Nitrogen doping concentration as determined by photoluminescence in 4H–and 6H–SiC
Low-temperature photoluminescence PL spectroscopy is used for determination of the
nitrogen doping concentration in noncompensated 4H–and 6H–SiC by comparing the
intensity of nitrogen-bound exciton BE lines to that of the free exciton FE, the latter being
used as an internal reference. The results are compared with a previous work performed for
the case of 6H–SiC only. A line-fitting procedure with the proper line shapes is used to
determine the contribution of the BE and FE lines in the PL spectrum. The ratio of the BE …
nitrogen doping concentration in noncompensated 4H–and 6H–SiC by comparing the
intensity of nitrogen-bound exciton BE lines to that of the free exciton FE, the latter being
used as an internal reference. The results are compared with a previous work performed for
the case of 6H–SiC only. A line-fitting procedure with the proper line shapes is used to
determine the contribution of the BE and FE lines in the PL spectrum. The ratio of the BE …
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