Novel T-channel nanowire FET with built-in signal amplification for pH sensing
2009 IEEE International Electron Devices Meeting (IEDM), 2009•ieeexplore.ieee.org
The low level of output signal in conventional silicon nanowire field-effect transistors (FETs)
could limit their potential deployments as integrated chemical and biomedical sensors. We
have proposed in this work a novel T-shape channel nanowire FET with a built-in signal
amplification mechanism. Compared to the co-fabricated, conventional silicon nanowire FET
sensors, we have experimentally extracted from the novel device a significant improvement
of almost 50 times in pH detection sensitivity.
could limit their potential deployments as integrated chemical and biomedical sensors. We
have proposed in this work a novel T-shape channel nanowire FET with a built-in signal
amplification mechanism. Compared to the co-fabricated, conventional silicon nanowire FET
sensors, we have experimentally extracted from the novel device a significant improvement
of almost 50 times in pH detection sensitivity.
The low level of output signal in conventional silicon nanowire field-effect transistors (FETs) could limit their potential deployments as integrated chemical and biomedical sensors. We have proposed in this work a novel T-shape channel nanowire FET with a built-in signal amplification mechanism. Compared to the co-fabricated, conventional silicon nanowire FET sensors, we have experimentally extracted from the novel device a significant improvement of almost 50 times in pH detection sensitivity.
ieeexplore.ieee.org
以上显示的是最相近的搜索结果。 查看全部搜索结果