Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition
M Matys, R Stoklas, M Blaho, B Adamowicz - Applied physics letters, 2017 - pubs.aip.org
The key feature for the precise tuning of V th in GaN-based metal-insulator-semiconductor
(MIS) high electron mobility transistors is the control of the positive fixed charge (Q f) at the
insulator/III-N interfaces, whose amount is often comparable to the negative surface
polarization charge ( Q pol−). In order to clarify the origin of Q f, we carried out a
comprehensive capacitance-voltage (CV) characterization of SiO 2/Al x Ga 1–x N/GaN and
SiN/Al x Ga 1–x N/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both …
(MIS) high electron mobility transistors is the control of the positive fixed charge (Q f) at the
insulator/III-N interfaces, whose amount is often comparable to the negative surface
polarization charge ( Q pol−). In order to clarify the origin of Q f, we carried out a
comprehensive capacitance-voltage (CV) characterization of SiO 2/Al x Ga 1–x N/GaN and
SiN/Al x Ga 1–x N/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both …
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