PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm2 V–1 s–1
Nano letters, 2013•ACS Publications
PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities
above 7 cm2 V–1 s–1 are made by infilling sulfide-capped QD films with amorphous
alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved
by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation
of surface states by the ALD coating. A series of control experiments rule out alternative
explanations. Partial infilling tunes the electrical characteristics of the FETs.
above 7 cm2 V–1 s–1 are made by infilling sulfide-capped QD films with amorphous
alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved
by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation
of surface states by the ALD coating. A series of control experiments rule out alternative
explanations. Partial infilling tunes the electrical characteristics of the FETs.
PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm2 V–1 s–1 are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.
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