Performance improvement and analysis of PtSi Schottky barrier p-MOSFET based on charge plasma concept for low power applications
S Kale - Silicon, 2020 - Springer
This work reports a platinum silicide (PtSi) Schottky Barrier (SB) p-MOSFET (SB p-MOSFET)
using charge plasma concept for low power applications. Here, we use two different
materials to form source of the device. The source consists of two parts as primary source
and extension. To consist source, PtSi and for extension, platinum metal is used. The
proposed device is named as charge plasma (CP) SB p-MOSFET (CP SB p-MOSFET). The
use of platinum extension induces the hole plasma near the source end. As a result …
using charge plasma concept for low power applications. Here, we use two different
materials to form source of the device. The source consists of two parts as primary source
and extension. To consist source, PtSi and for extension, platinum metal is used. The
proposed device is named as charge plasma (CP) SB p-MOSFET (CP SB p-MOSFET). The
use of platinum extension induces the hole plasma near the source end. As a result …
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