Photo‐/thermal‐responsive field‐effect transistor upon blending polymeric semiconductor with hexaarylbiimidazole toward photonically programmable and thermally …
Advanced Materials, 2019•Wiley Online Library
It is shown that the semiconducting performance of field‐effect transistors (FETs) with
PDPP4T (poly (diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light
irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole
compound (p‐NO2‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of
PDPP4T and p‐NO2‐HABI is successfully fabricated. The transfer characteristics are altered
significantly with current enhanced up to 106‐fold at VG= 0 V after UV light irradiation …
PDPP4T (poly (diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light
irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole
compound (p‐NO2‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of
PDPP4T and p‐NO2‐HABI is successfully fabricated. The transfer characteristics are altered
significantly with current enhanced up to 106‐fold at VG= 0 V after UV light irradiation …
Abstract
It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound (p‐NO2‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p‐NO2‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 106‐fold at VG = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p‐NO2‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p‐NO2‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.
Wiley Online Library
以上显示的是最相近的搜索结果。 查看全部搜索结果