Physics‐based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT
In this paper, a physics‐based analytical model for threshold voltage, two‐dimensional
electron gas (2DEG) sheet charge density and DC characteristics of the proposed spacer
layer‐based AlxIn1− xN/AlN/GaN metal‐oxide‐semiconductor high electron mobility
transistor is presented by considering the quasi‐triangular quantum well. 2DEG sheet
charge density (ns) is obtained by the variation of Fermi level (Ef) with supply voltage and
the formation of energy subbands E0 and E1. An expression for the 2DEG sheet charge …
electron gas (2DEG) sheet charge density and DC characteristics of the proposed spacer
layer‐based AlxIn1− xN/AlN/GaN metal‐oxide‐semiconductor high electron mobility
transistor is presented by considering the quasi‐triangular quantum well. 2DEG sheet
charge density (ns) is obtained by the variation of Fermi level (Ef) with supply voltage and
the formation of energy subbands E0 and E1. An expression for the 2DEG sheet charge …
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