Point injection in trench insulated gate bipolar transistor for ultra low losses
M Antoniou, F Udrea, F Bauer… - … Symposium on Power …, 2012 - ieeexplore.ieee.org
M Antoniou, F Udrea, F Bauer, A Mihaila, I Nistor
2012 24th International Symposium on Power Semiconductor Devices …, 2012•ieeexplore.ieee.orgIn this paper we propose novel designs that enhance the plasma concentration across the
Field Stop IGBT. The “p-ring” and the “point-injection” type devices exhibit increased
cathode side conductivity modulation which results in impressive IGBT performance
improvement. These designs are shown to be extremely effective in lowering the on-state
losses without compromising the switching performance or the breakdown rating. For the
same switching losses we can achieve more than 20% reduction of the on state energy …
Field Stop IGBT. The “p-ring” and the “point-injection” type devices exhibit increased
cathode side conductivity modulation which results in impressive IGBT performance
improvement. These designs are shown to be extremely effective in lowering the on-state
losses without compromising the switching performance or the breakdown rating. For the
same switching losses we can achieve more than 20% reduction of the on state energy …
In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The “p-ring” and the “point-injection” type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT.
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