Possibility of fabricating light-emitting porous silicon from gas phase etchants
S Kalem, O Yavuzcetin - Optics Express, 2000 - opg.optica.org
Optics Express, 2000•opg.optica.org
We present a new technique for porous semiconductor formation which is based on the
exposure of semiconductor surfaces to gas phase etchants. The technique offers the
possibility of fabricating light-emitting devices by selectively exposing a silicon surface to HF
vapor. Photoluminescence measurements reveal an efficient emission at around 750 nm.
FTIR analysis confirm the existence of strong hydrogen incorporation and oxidation as
evidenced from the local bonding environment of hydrogen and oxygen atoms.
exposure of semiconductor surfaces to gas phase etchants. The technique offers the
possibility of fabricating light-emitting devices by selectively exposing a silicon surface to HF
vapor. Photoluminescence measurements reveal an efficient emission at around 750 nm.
FTIR analysis confirm the existence of strong hydrogen incorporation and oxidation as
evidenced from the local bonding environment of hydrogen and oxygen atoms.
We present a new technique for porous semiconductor formation which is based on the exposure of semiconductor surfaces to gas phase etchants. The technique offers the possibility of fabricating light-emitting devices by selectively exposing a silicon surface to HF vapor. Photoluminescence measurements reveal an efficient emission at around 750 nm. FTIR analysis confirm the existence of strong hydrogen incorporation and oxidation as evidenced from the local bonding environment of hydrogen and oxygen atoms.
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