Precision alignment of mask etching with respect to crystal orientation
JM Lai, WH Chieng, YC Huang - Journal of Micromechanics and …, 1998 - iopscience.iop.org
JM Lai, WH Chieng, YC Huang
Journal of Micromechanics and Microengineering, 1998•iopscience.iop.orgFor most micro-mechanical devices, a high precision alignment of mask pattern to crystal
orientation is preferred. Such alignment even becomes critical for devices that
simultaneously require a smooth sidewall and minimal undercut. In this article, we present
an innovative pre-etching pattern to determine the crystal orientation on [100] silicon wafers.
This pattern etched on the wafer allows us to determine the crystal orientation within an
accuracy of. Such a pre-etching pattern can be used as a valuable reference for all …
orientation is preferred. Such alignment even becomes critical for devices that
simultaneously require a smooth sidewall and minimal undercut. In this article, we present
an innovative pre-etching pattern to determine the crystal orientation on [100] silicon wafers.
This pattern etched on the wafer allows us to determine the crystal orientation within an
accuracy of. Such a pre-etching pattern can be used as a valuable reference for all …
Abstract
For most micro-mechanical devices, a high precision alignment of mask pattern to crystal orientation is preferred. Such alignment even becomes critical for devices that simultaneously require a smooth sidewall and minimal undercut. In this article, we present an innovative pre-etching pattern to determine the crystal orientation on [100] silicon wafers. This pattern etched on the wafer allows us to determine the crystal orientation within an accuracy of. Such a pre-etching pattern can be used as a valuable reference for all subsequent mask patterns.
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