This article presents a method for numerical computation of the degree of coverage of
chemisorbates and the resultant surface band bending as a function of the ambient gas
pressure, temperature, and semiconductor doping level. This method enables quantitative
evaluation of the effect of chemisorption on the electronic properties of semiconductor
surfaces, such as the work function and surface conductivity, which is of great importance for
many applications such as solid-state chemical sensors and electro-optical devices. The …