Quantized conductive filament formed by limited Cu source in sub-5nm era
2011 International Electron Devices Meeting, 2011•ieeexplore.ieee.org
For the first time, we have investigated the resistive switching characteristics in extreme size
(sub-5nm) device. Less than 5nm effective electrode radius is confirmed by conductive-AFM
and FIB-TEM analysis. The conductive filament source (Cu ions) is limited by applying novel
fabrication technology. Due to the limited Cu source, we observe the quantized formation of
conductive path, which results in the distinguishable conductance states and shows the
feasibility of multi-bit operation. By controlling the motion of Cu ions precisely, ideal selection …
(sub-5nm) device. Less than 5nm effective electrode radius is confirmed by conductive-AFM
and FIB-TEM analysis. The conductive filament source (Cu ions) is limited by applying novel
fabrication technology. Due to the limited Cu source, we observe the quantized formation of
conductive path, which results in the distinguishable conductance states and shows the
feasibility of multi-bit operation. By controlling the motion of Cu ions precisely, ideal selection …
For the first time, we have investigated the resistive switching characteristics in extreme size (sub-5nm) device. Less than 5nm effective electrode radius is confirmed by conductive-AFM and FIB-TEM analysis. The conductive filament source (Cu ions) is limited by applying novel fabrication technology. Due to the limited Cu source, we observe the quantized formation of conductive path, which results in the distinguishable conductance states and shows the feasibility of multi-bit operation. By controlling the motion of Cu ions precisely, ideal selection behavior for xpoint memory application was achieved.
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