Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3
Atomically smooth, single crystalline Bi 2 Se 3 thin films were prepared on Si (111) by
molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-
ray photoelectron emission spectroscopy, and Raman spectroscopy were used to
characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized
quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with
controllable thickness down to one quintuple layer (∼ 1 nm).
molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-
ray photoelectron emission spectroscopy, and Raman spectroscopy were used to
characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized
quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with
controllable thickness down to one quintuple layer (∼ 1 nm).
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