We determine the Raman scattering efficiency of the and peaks in graphene. Three substrates are used: silicon covered with 300 or 90 nm oxide, and calcium fluoride (CaF). On Si/SiO, the areas of the and peak show a strong dependence on the substrate due to interference effects, while on CaF no significant dependence is detected. Unintentional doping is reduced by placing graphene on CaF. We determine the Raman scattering efficiency by comparison with the 322 cm peak area of CaF. At 2.41 eV, the Raman efficiency of the peak is mSr, and changes with the excitation energy to the power of 4. The Raman efficiency is at least one order of magnitude higher than that of the peak, with a different excitation energy dependence.