Rectification, Gating Voltage, and Interchannel Communication of Nanoslot Arrays<? format?> due to Asymmetric Entrance Space Charge Polarization
G Yossifon, YC Chang, HC Chang - Physical review letters, 2009 - APS
G Yossifon, YC Chang, HC Chang
Physical review letters, 2009•APSA nanoslot array with a uniform surface charge and height but with asymmetric slot
entrances is shown to exhibit strong rectification, gating type current-voltage characteristics
and a total current higher than the sum of isolated slots at a large voltage. Unlike previous
reports of low-voltage current rectification within nanopores and nanochannels with a
nonuniform surface charge and/or height, the asymmetry is due to asymmetric space-charge
polarization and interslot communication at only one of the two different entrances.
entrances is shown to exhibit strong rectification, gating type current-voltage characteristics
and a total current higher than the sum of isolated slots at a large voltage. Unlike previous
reports of low-voltage current rectification within nanopores and nanochannels with a
nonuniform surface charge and/or height, the asymmetry is due to asymmetric space-charge
polarization and interslot communication at only one of the two different entrances.
A nanoslot array with a uniform surface charge and height but with asymmetric slot entrances is shown to exhibit strong rectification, gating type current-voltage characteristics and a total current higher than the sum of isolated slots at a large voltage. Unlike previous reports of low-voltage current rectification within nanopores and nanochannels with a nonuniform surface charge and/or height, the asymmetry is due to asymmetric space-charge polarization and interslot communication at only one of the two different entrances.
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