Resonant tunneling through ultrasmall quantum dots: Zero-bias anomalies, magnetic-field dependence, and boson-assisted transport
J König, J Schmid, H Schoeller, G Schön - Physical Review B, 1996 - APS
J König, J Schmid, H Schoeller, G Schön
Physical Review B, 1996•APSWe study resonant tunneling through a single-level quantum dot in the presence of strong
Coulomb repulsion beyond the perturbative regime. The level is either spin degenerate or
can be split by a magnetic field. Furthermore we discuss the influence of a bosonic
environment. Using a real-time diagrammatic formulation, we calculate transition rates, the
spectral density, and the nonlinear IV characteristic. The spectral density shows a multiplet
of Kondo peaks split by the transport voltage and the boson frequencies and shifted by the …
Coulomb repulsion beyond the perturbative regime. The level is either spin degenerate or
can be split by a magnetic field. Furthermore we discuss the influence of a bosonic
environment. Using a real-time diagrammatic formulation, we calculate transition rates, the
spectral density, and the nonlinear IV characteristic. The spectral density shows a multiplet
of Kondo peaks split by the transport voltage and the boson frequencies and shifted by the …
Abstract
We study resonant tunneling through a single-level quantum dot in the presence of strong Coulomb repulsion beyond the perturbative regime. The level is either spin degenerate or can be split by a magnetic field. Furthermore we discuss the influence of a bosonic environment. Using a real-time diagrammatic formulation, we calculate transition rates, the spectral density, and the nonlinear I-V characteristic. The spectral density shows a multiplet of Kondo peaks split by the transport voltage and the boson frequencies and shifted by the magnetic field. This leads to zero-bias anomalies in the differential conductance, which agree well with recent experimental results for the electron transport through single-charge traps. Furthermore, we predict that the sign of the zero-bias anomaly depends on the level position relative to the Fermi level of the leads.© 1996 The American Physical Society.
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