Correlation betweenJ c and screw dislocation density in sputtered YBa2Cu3O7-δ films
…, D Anselmetti, JG Bednorz, A Catana, C Gerber… - Zeitschrift für Physik B …, 1992 - Springer
… for the pinning characteristics of high-T~ films, if those were the only pinning sites present.
Our results also agree with calculations of the pinning force of screw dislocations based on …
Our results also agree with calculations of the pinning force of screw dislocations based on …
Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy
B Loitsch, F Schuster, M Stutzmann… - Applied Physics …, 2013 - pubs.aip.org
… thick InN film (N-rich growth at Φ In = 7.4 nm/min, T TC = 540 C). … the presence of c-component
(mixed and pure screw-type) … This confirms that the dislocation network is dominated by …
(mixed and pure screw-type) … This confirms that the dislocation network is dominated by …
Screw dislocation mediated growth of sputtered and laser-ablated YBa2Cu3O7-δ films
…, RF Broom, A Catana, T Frey, C Gerber… - Zeitschrift für Physik B …, 1992 - Springer
… these high-T~ cupreates may be utilized. In this paper, after briefly describing the thin film …
of substrate temperature and misorientation on the screw dislocation density. A decrease in …
of substrate temperature and misorientation on the screw dislocation density. A decrease in …
Misfit dislocations and phase transformations in high-Tc superconducting films
MY Gutkin, IA Ovid'ko - Journal of Physics: Condensed Matter, 2002 - iopscience.iop.org
… The generation of the screw dislocation is energetically favourable, if W < 0. The … critical
film thickness hc at which the screw dislocation generation becomes favourable in a growing film…
film thickness hc at which the screw dislocation generation becomes favourable in a growing film…
Growth and evolution of microstructure of epitaxial YBa2Cu3O7− x ultrathin and thin films on MgO
N Savvides, A Katsaros - Physica C: Superconductivity, 1994 - Elsevier
… Higher growth temperatures result in smooth films with a low density of screw dislocations, eg
< 0.3 X lo9 cm-’ at 850C for 200 cL unit-cells films… For the layered high-T, superconductors. …
< 0.3 X lo9 cm-’ at 850C for 200 cL unit-cells films… For the layered high-T, superconductors. …
Electric‐field induced converse piezoeffect in screw dislocated YBa2Cu3O7− δ thin films
SA Sergeenkov - Journal of applied physics, 1995 - pubs.aip.org
… films because of too low a rate of dislocation critical current enhancement in screw dislocated
high-T, … motion at the temperatures used in these experiments (anfilms”2 have been treated …
high-T, … motion at the temperatures used in these experiments (anfilms”2 have been treated …
Dislocations and Flux Pinning inYBa2Cu3O7-δ
S Jin, GW Kammlott, S Nakahara, TH Tiefel… - Science, 1991 - science.org
… [001] screw dislocations) in their thin films also appears to be … dislocations remain as
appealing pinning centers, as their core dimension is comparable to the coherence lengths in high T…
appealing pinning centers, as their core dimension is comparable to the coherence lengths in high T…
Scanning tunneling microscopy of surface properties of epitaxial YBa2Cu3O7− δ and Bi2Sr2Ca1Cu2O8+ δ high-Tc thin films prepared by different methods
J Burger, P Bauer, M Veith, G Saemann-Ischenko - Ultramicroscopy, 1992 - Elsevier
… YBazCu307_ a and BizSrzCalCuzOs+ a high-T c thin films prepared by different methods …
Since in our investigations screw dislocations have only been observed on YBa2Cu307_ ~ …
Since in our investigations screw dislocations have only been observed on YBa2Cu307_ ~ …
Dislocation model of superconducting transport properties of YBCO thin films and single crystals
VM Pan, AL Kasatkin, VL Svetchnikov, HW Zandbergen - Cryogenics, 1993 - Elsevier
… films and single crystals we suggest a dominant contribution for the vortex p_inning (H II
C-axis) of low angle grain boundary edge dislocations … of screw dislocations in the growing film …
C-axis) of low angle grain boundary edge dislocations … of screw dislocations in the growing film …
Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE
… screw and edge threading dislocations (TDs) up to ∼10 10 … The high T S =780 C was also
used during growth of the 50-… -free and atomically smooth AlN films with a thickness up to 2 …
used during growth of the 50-… -free and atomically smooth AlN films with a thickness up to 2 …