This paper reports the sensitivity analysis of double gate TFET using the Transition Metal Di
chalcogenide (TMD) material in photo sensitive region with the help of technology computer
aided design (TCAD) simulator tool. The sensitivity analysis elaborates the significance of
TMD material for optical applications. The photo sensitivity analysis is exhibited for the
variation in wavelength (λ) of incident light under the visible range of spectrum. Furthermore,
we have executed the performance of photo sensor by varying the position of illumination …