In a crystalline solar cell processing, diffusion of minority carriers into p-type or n-type wafers is a critical step to form an emitter. It requires uniform sheet resistance and low surface recombination velocity [1]. After diffusion, emitter sheet resistance can give a better idea about the diffusion profile. In solid doping sources one can tailor the diffusion profiles by changing the source concentrations [2], whereas in spin-on doping process temperature is the key factor to control diffusion profiles but sheet resistance value can be reduced to required value by using dilute HF [3]. So sheet resistance has direct relation with the diffusion, especially in spin-on doping. Series resistance is another important factor which is a function of grid geometry and can be calculated by assuming that resistance of the grid electrode is less than the sheet resistance [4]. Normally sheet resistance beneath the contact differs from the semiconductor sheet resistance beside the contact and low values of contact resistance are associated with heavy doping and vice versa. Contact resistivity can be calculated by the method ρc= RsL2 T where as LT called current transfer length and semiconductor sheet resistance Rs can be calculated by using equation (1).() 2 s