SrHfO3 Films Grown on Si(100) by Plasma-Assisted Atomic Layer Deposition.
K Black, M Werner, R Rowlands–Jones… - Chemistry of …, 2011 - ACS Publications
K Black, M Werner, R Rowlands–Jones, PR Chalker, MJ Rosseinsky
Chemistry of materials, 2011•ACS PublicationsSrHfO3 films have been synthesized by atomic layer deposition for the first time. Control of
stoichiometry is achieved using an oxygen plasma source with Sr-and Hf-cyclopentadienyl
based precursors. After annealing at 600° C the crystalline phase exhibits a dielectric
constant κ of 21.
stoichiometry is achieved using an oxygen plasma source with Sr-and Hf-cyclopentadienyl
based precursors. After annealing at 600° C the crystalline phase exhibits a dielectric
constant κ of 21.
SrHfO3 films have been synthesized by atomic layer deposition for the first time. Control of stoichiometry is achieved using an oxygen plasma source with Sr- and Hf-cyclopentadienyl based precursors. After annealing at 600 °C the crystalline phase exhibits a dielectric constant κ of 21.
ACS Publications以上显示的是最相近的搜索结果。 查看全部搜索结果