[HTML][HTML] Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope
The last few years have seen a great deal of progress in the development of transmission
electron microscopy based techniques for strain mapping. New techniques have appeared
such as dark field electron holography and nanobeam diffraction and better known ones
such as geometrical phase analysis have been improved by using aberration corrected ultra-
stable modern electron microscopes. In this paper we apply dark field electron holography,
the geometrical phase analysis of high angle annular dark field scanning transmission …
electron microscopy based techniques for strain mapping. New techniques have appeared
such as dark field electron holography and nanobeam diffraction and better known ones
such as geometrical phase analysis have been improved by using aberration corrected ultra-
stable modern electron microscopes. In this paper we apply dark field electron holography,
the geometrical phase analysis of high angle annular dark field scanning transmission …
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