Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1'-methyl-ruthenocene
Ru thin films were grown on TiO2, Al2O3, HfO2, and ZrO2 films as well as on HF-etched
silicon and SiO2-covered silicon by atomic layer deposition from 1-ethyl-1'-methyl-
ruthenocene,(CH3C5H4)(C2H5C5H4) Ru, and oxygen. The growth of Ru was obtained and
characterized at temperatures ranging from 250 to 325° C. On epitaxial rutile, highly oriented
growth of Ru with hexagonal structure was achieved, while on other substrates the films
possessed nonoriented hexagonal structure. Ruthenium oxide was not detected in the films …
silicon and SiO2-covered silicon by atomic layer deposition from 1-ethyl-1'-methyl-
ruthenocene,(CH3C5H4)(C2H5C5H4) Ru, and oxygen. The growth of Ru was obtained and
characterized at temperatures ranging from 250 to 325° C. On epitaxial rutile, highly oriented
growth of Ru with hexagonal structure was achieved, while on other substrates the films
possessed nonoriented hexagonal structure. Ruthenium oxide was not detected in the films …