Sub 50 nm InP HEMT device with Fmax greater than 1 THz
R Lai, XB Mei, WR Deal, W Yoshida… - 2007 IEEE …, 2007 - ieeexplore.ieee.org
2007 IEEE international electron devices meeting, 2007•ieeexplore.ieee.org
In this paper, we present the latest advancements of sub 50 nm InGaAs/InAlAs/InP High
Electron Mobility Transistor (InP HEMT) devices that have achieved extrapolated Fmax
above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum
stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385
GHz. This extrapolation is validated by the demonstration of a 3-stage common source low
noise MMIC amplifier which exhibits greater than 18 dB gain at 300 GHz and 15 dB gain at …
Electron Mobility Transistor (InP HEMT) devices that have achieved extrapolated Fmax
above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum
stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385
GHz. This extrapolation is validated by the demonstration of a 3-stage common source low
noise MMIC amplifier which exhibits greater than 18 dB gain at 300 GHz and 15 dB gain at …
In this paper, we present the latest advancements of sub 50 nm InGaAs/InAlAs/InP High Electron Mobility Transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385 GHz. This extrapolation is validated by the demonstration of a 3-stage common source low noise MMIC amplifier which exhibits greater than 18 dB gain at 300 GHz and 15 dB gain at 340 GHz.
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