Resistive memory devices suffer from a tradeoff between operating current and data retention.
The key parameter governing this tradeoff is shown to be the 1-atom conductance of the …

… The design of atomic dimensional memory … CF of conductive bridge RAM is considered to
be an example of atomic-switching, further discussion is mainly focused on conductive bridge …

… memories (NVMs) thanks to their switching properties 1,2 . Among them, conductive bridge
random access memories (… of the memory cell and is also the case for Te-based subquantum …

Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages
over floating gate flash cells. Here, we describe a memory design which carries these cell-…

… Here, we investigated subquantum CBRAMs, operating with … (Ag, Cu), these new memory
cells are based on the diffusion … such as Te, it is sub-quantum (0.03 G 0 ) enabling operation at …

… memory (RRAM) is considered one of the most promising emerging candidates for nonvolatile
embedded memory, with applications in neuromorphic and in-memory … -step subquantum …

… Conductive bridge random access memory (CBRAM) represents a promising technology
under consideration for future non-volatile memory. … Subquantum conductive-bridge memory …

… incurred by data transfer between memories and processors. … In addition to the memory
function, information processing … are also called conductive-bridge random-access memories (…

… A subquantum CBRAM memory cell utilizing tellurium (Te), an elemental semiconductor
with a band gap of 0.3 eV 41 , which has a 1-atom conductance deduced 40 to be G 1atom = …

… This study demonstrates a systematic approach to design a sub-quantum selector-less
conductive bridge random access memory (CBRAM) which can work as one-selector-one-…