Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
ML Huang, YC Chang, CH Chang, YJ Lee… - Applied Physics …, 2005 - pubs.aip.org
Al 2 O 3 was deposited on In 0.15 Ga 0.85 As∕ GaAs using atomic-layer deposition (ALD).
Without any surface preparation or postthermal treatment, excellent electrical properties of Al
2 O 3∕ InGaAs∕ GaAs heterostructures were obtained, in terms of low electrical leakage
current density ( 10− 8 to 10− 9 A∕ cm 2) and low interfacial density of states (D it) in the
range of 10 12 cm− 2 eV− 1. The interfacial reaction and structural properties studied by
high-resolution x-ray photoelectron spectroscopy (HRXPS) and high-resolution transmission …
Without any surface preparation or postthermal treatment, excellent electrical properties of Al
2 O 3∕ InGaAs∕ GaAs heterostructures were obtained, in terms of low electrical leakage
current density ( 10− 8 to 10− 9 A∕ cm 2) and low interfacial density of states (D it) in the
range of 10 12 cm− 2 eV− 1. The interfacial reaction and structural properties studied by
high-resolution x-ray photoelectron spectroscopy (HRXPS) and high-resolution transmission …
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