The application of level set method for simulation of PECVD/LPCVD processes
Proceedings of the Physics of Semiconductor Devices: 17th …, 2013•books.google.com
In this study we present a Chemical Vapor Deposition (CVD) process simulator based on the
sparse field method for solving the level set equations. An accurate and efficient tool for
tracking the CVD profile evolution is developed, which includes different physical effects of
direct deposition and angle dependent ion-induced deposition as well as redeposition. The
simulation results shows that the deposition profiles agree well with the experiment for
different opening sizes and various micro structures. It also provides the evidence that this …
sparse field method for solving the level set equations. An accurate and efficient tool for
tracking the CVD profile evolution is developed, which includes different physical effects of
direct deposition and angle dependent ion-induced deposition as well as redeposition. The
simulation results shows that the deposition profiles agree well with the experiment for
different opening sizes and various micro structures. It also provides the evidence that this …
Abstract
In this study we present a Chemical Vapor Deposition (CVD) process simulator based on the sparse field method for solving the level set equations. An accurate and efficient tool for tracking the CVD profile evolution is developed, which includes different physical effects of direct deposition and angle dependent ion-induced deposition as well as redeposition. The simulation results shows that the deposition profiles agree well with the experiment for different opening sizes and various micro structures. It also provides the evidence that this approach is able to describe the complex topographical evolution for PECVD/LPCVD processes.
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